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SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–60
rDS(on) (W)
0.020
ID (A)
–65a
TO-220AB
S
TO-263
G DRAIN connected to TAB
G D S Top View SUP65P06-20
G
D S D
Top View SUB65P06-20 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR
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Symbol
VGS
Limit
"20 –65a –39 –200 –60 180 250d 3.
SUB65P06-20 Datasheet
