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SUB85N10-10 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V TO-220AB ID (A) 85a FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 G DS Top View SUB85N10-10 G S N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
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