* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 G DS Top View SUB85N10-10 G S N-Channel MOSFET Lead (Pb)-free S
SUB85N10-10 Datasheet (95.48 KB)
SUB85N10-10
Vishay ↗ Siliconix
95.48 KB
N-channel mosfet.
SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 a.
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