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SUM60N02-3M9P - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS.

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SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (Ω) 0.0039 at VGS = 10 V 0.0052 at VGS = 4.5 V ID (A)a 60 60 FEATURES • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • OR-ing D TO-263 G DRAIN connected to TAB G D S S N-Channel MOSFET Top View Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.