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SUM60P05-11LT - P-Channel MOSFET

Features

  • ID (A).
  • 60a.
  • 60a rDS(on) (W) 0.011 @ VGS =.
  • 10 V 0.0175 @ VGS =.
  • 4.5 V D TrenchFETr Power.

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Full PDF Text Transcription

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www.DataSheet4U.com SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 FEATURES ID (A) –60a –60a rDS(on) (W) 0.011 @ VGS = –10 V 0.0175 @ VGS = –4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS S D Automotive D Industrial D2PAK-5L T1 G D1 T2 D2 1 2 3 4 5 D G D T1 S T2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.
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