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Vishay Intertechnology Electronic Components Datasheet

SUR70N02-04P Datasheet

N-Channel MOSFET

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SUR70N02-04P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0037 @ VGS = 10 V
20
0.0061 @ VGS = 4.5 V
TO-252
Reverse Lead DPAK
ID (A)a
37
29
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D Synchronous Buck Converter
Low Side
D Synchronous Rectifier
Secondary Rectifier
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 25_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
37a
70b
100
37
30
45
8.3a
93
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SUR70N02-04P Datasheet

N-Channel MOSFET

No Preview Available !

SUR70N02-04P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
ID ^ 5V0DAD, =VG10ENV,=R1L0=V,0R.2gW= 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
ISM
VSD
trr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
0.8 3.0 V
"100
nA
1
50 mA
50 A
0.0028 0.0037
0.0047
0.0052
0.0061
W
15 S
4500
1520
pF
800
0.5 1.1 1.8 W
34 153
11 nC
10
15 25
11 20
35 55 ns
15 25
100 A
1.2 1.5 V
45 90 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
Transfer Characteristics
140
140
120
100
80
60
40
20
0
0
VGS = 10 thru 4 V
3V
2V
2468
VDS Drain-to-Source Voltage (V)
10
120
100
80
60
40 TC = 125_C
20
0
0.0
25_C
55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS Gate-to-Source Voltage (V)
4.0
www.vishay.com
2
Document Number: 72776
S-32697—Rev. A, 19-Jan-04


Part Number SUR70N02-04P
Description N-Channel MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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