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SUU50N03-10P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (Ω)
0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V
ID (A)a
20 18
TO-251
D
G and DRAIN-TAB
G D S Top View Order Number: SUU50N03-10P
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS
Symbol
VDS VGS
Limit
30
20 20 14 100 20 71b 8.
SUU50N03-10P Datasheet
