Datasheet4U Logo Datasheet4U.com

SUU50N10-18P - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested RoHS.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net New Product SUU50N10-18P Vishay Siliconix N-Channel 100-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0185 at VGS = 10 V ID (A)a 50 Qg (Typ.) 48 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 • Primary Side Switch • Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 100 ± 20 50a 39 8.2b 5.8b 100 50a 2.0b 45 101 136.4 68.2 3.0b 1.