8.3 21 nC
Qg (Typ)
Completely D TrenchFETr Power MOSFET Pb-free D Industry First 1.5-V Rated MOSFET D Ultra Small MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area
Product Is.
Full PDF Text Transcription for Si8419DB (Reference)
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Si8419DB. For precise diagrams, and layout, please refer to the original PDF.
Si8419DB New Product Vishay Siliconix www.DataSheet4U.com P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = −4.5 V −8 0.042 @ VGS = −2.5 V 0....
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RY VDS (V) rDS(on) (W) 0.035 @ VGS = −4.5 V −8 0.042 @ VGS = −2.5 V 0.052 @ VGS = −1.8 V 0.069 @ VGS = −1.5 V FEATURES ID (A)a −11.7 −10.7 −9.6 −8.3 21 nC Qg (Typ) Completely D TrenchFETr Power MOSFET Pb-free D Industry First 1.5-V Rated MOSFET D Ultra Small MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.
Si8419DB Datasheet
