SI8417DB Description
P-Channel 1.8 V (G-S) MOSFET Si8417DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.021 at VGS = - 4.5 V - 12 0.026 at VGS = - 2.5 V 0.033 at VGS = - 1.8 V ID (A)a - 14.5 - 13.0 - 11.5 Qg (Typ.) 35 nC MICRO FOOT Bump Side View Backside View 5S S4 6G.
SI8417DB Key Features
- Halogen-free according to IEC 61249-2-21
- TrenchFET® Power MOSFET
- Ultra Small MICRO FOOT® Chipscale
- pliant to RoHS Directive 2002/95/EC