SI8417DB Overview
P-Channel 1.8 V (G-S) MOSFET Si8417DB Definition • TrenchFET® Power MOSFET • Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area • pliant to RoHS Directive 2002/95/EC APPLICATIONS • PA Switch • Battery Switch • Load Switch S 1D D2 G Device Marking: 8417 xxx = Date/Lot Traceability Code Ordering Information: Si8417DB-T2-E1 (Lead (Pb)-free) D P-Channel MOSFET
SI8417DB Key Features
- Halogen-free according to IEC 61249-2-21
- TrenchFET® Power MOSFET
- Ultra Small MICRO FOOT® Chipscale
- pliant to RoHS Directive 2002/95/EC