The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
Si8416DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 8
RDS(on) () MAX. 0.023 at VGS = 4.5 V 0.025 at VGS = 2.5 V 0.030 at VGS = 1.8 V 0.040 at VGS = 1.5 V 0.095 at VGS = 1.2 V
ID (A) d 16 16 16 15 3
Qg (TYP.) 17 nC
MICRO FOOT® 1.5 x 1 S
S2
xxxxxxx
1 mm
1
1.5 mm
Backside View
D3 4
1 6G 5S D Bump Side View
Marking Code: xxxx = 8416
xxx = Date / lot traceability code
Ordering Information: Si8416DB-T2-E1 (Lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height • Material categorization:
for definitions of compliance please see www.vishay.