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Vishay Intertechnology Electronic Components Datasheet

SiHF740A Datasheet

Power MOSFET

No Preview Available !

Power MOSFET
IRF740A, SiHF740A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
36
9.9
16
Single
0.55
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
TO-220AB
IRF740APbF
SiHF740A-E3
IRF740A
SiHF740A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12).
c. ISD 10 A, dV/dt 330 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 30
10
6.3
40
1.0
630
10
12.5
125
5.9
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91051
S11-0508-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHF740A Datasheet

Power MOSFET

No Preview Available !

IRF740A, SiHF740A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ab
400 -
-V
- 0.48 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
-
-
0.55
4.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V, VDS = 320 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V to 320 V
VGS = 10 V
ID = 10 A, VDS = 320 V,
see fig. 6 and 13b
VDD = 200 V, ID = 10 A,
Rg = 10 , RD = 19.5, see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
1030
170
7.7
1490
52
61
-
-
-
10
35
24
22
-
-
-
-
-
-
36
9.9
16
-
-
-
-
pF
nC
ns
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 10
A
- - 40
Body Diode Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 240 360 ns
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
Qrr - 1.9 2.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91051
S11-0508-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHF740A
Description Power MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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