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Vishay Intertechnology Electronic Components Datasheet

SiHF744 Datasheet

Power MOSFET

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Power MOSFET
IRF744, SiHF744
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
450
VGS = 10 V
80
12
41
Single
0.63
TO-220
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF744PbF
SiHF744-E3
IRF744
SiHF744
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 12 mH, RG = 25 Ω IAS = 8.8 A (see fig. 12).
c. ISD 8.8 A, dV/dt 200 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91056
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
LIMIT
± 20
8.8
5.6
35
1.0
540
8.8
13
125
3.5
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHF744 Datasheet

Power MOSFET

No Preview Available !

IRF744, SiHF744
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
www.DataSheet4U.com
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20
VDS = 450 V, VGS = 0 V
VDS = 360 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.3 Ab
VDS = 50 V, ID = 5.3 Ab
Input Capacitance
Ciss VGS = 0 V
Output Capacitance
Coss
VDS = 25 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 8.8 A, VDS = 360 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 225 V, ID = 8.8 A
RG = 9.1 Ω, RD = 25 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
MIN.
450
-
2.0
-
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.59 - V/°C
- 4.0 V
- ± 100 nA
- 25
µA
- 250
-
0.63
Ω
- -S
1400
370
140
-
-
-
8.7
28
58
27
4.5
-
-
-
80
12
41
-
-
-
-
-
7.5 -
pF
nC
ns
nH
- 8.8
A
- 35
Body Diode Voltage
VSD TJ = 25 °C, IS = 8.8 A, VGS = 0 Vb - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 8.8 A, dI/dt = 100 A/µsb
-
490 740 ns
Qrr - 3.2 4.8 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91056
S-Pending-Rev. A, 19-Jun-08


Part Number SiHF744
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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