SiHFBC40LC Datasheet | Vishay

IRFBC40LC, Si HFBC40LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 39 10 19 Single Features 600 V 1.2 - - - - - - - Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available Ro HS- PLIANT .. TO-220 DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements bined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications. S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFBC40LCPb F Si HFBC40LC-E3 IRFBC40LC Si...