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Vishay Intertechnology Electronic Components Datasheet

SiHFD214 Datasheet

Power MOSFET

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Power MOSFET
IRFD214, SiHFD214
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
250
VGS = 10 V
8.2
1.8
4.5
Single
D
2.0
HEXDIP
S
G
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HEXDIP
IRFD214PbF
SiHFD214-E3
IRFD214
SiHFD214
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12).
c. ISD 2.7 A, dI/dt 65 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
0.45
0.29
3.6
0.0083
57
0.45
0.10
1.0
4.8
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91130
S-Pending-Rev. A, 29-May-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFD214 Datasheet

Power MOSFET

No Preview Available !

IRFD214, SiHFD214
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
www.DataSheet4U.com
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.27 Ab
VDS = 50 V, ID = 1.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.7 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 2.7 A,
RG = 24 Ω, RD = 45 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN.
250
-
2.0
-
-
-
-
0.90
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.39 - V/°C
- 4.0 V
- ± 100 nA
- 25
µA
- 250
- 2.0 Ω
- -S
140 -
42 - pF
9.6 -
- 8.2
- 1.8 nC
- 4.5
7.0 -
7.6 -
ns
16 -
7.0 -
4.0 -
nH
6.0 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 0.45
A
- - 3.6
Body Diode Voltage
VSD
TJ = 25 °C, IS = 0.45 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 190 390 ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb
Qrr - 0.64 1.3s µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91130
S-Pending-Rev. A, 29-May-08


Part Number SiHFD214
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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