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SiHFD214 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 250 2.0.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription for SiHFD214 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFD214. For precise diagrams, and layout, please refer to the original PDF.

IRFD214, SiHFD214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURE...

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gs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURES 250 2.0 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Vishay Siliconix Logo SiHFD214 Power MOSFET Vishay Siliconix

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