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SiHFD214 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 250 2.0.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFD214 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFD214. For precise diagrams, and layout, please refer to the original PDF.

IRFD214, SiHFD214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 8.2 1.8 ...

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gs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 8.2 1.8 4.5 Single D FEATURES 250 2.0 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in mul

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Brand Logo Part Number Description Manufacturer
Vishay Logo SiHFD214 Power MOSFET Vishay

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