SiHFI520G Datasheet - Vishay Siliconix

Power MOSFET

SiHFI520G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* 175 °C Operating Temperature

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available RoHS

SiHFI520G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The mouldi.

SiHFI520G Datasheet (1.60 MB)

SiHFI520G Datasheet Preview — Preview of SiHFI520G PDF

Datasheet Details

Part number:

SiHFI520G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.60 MB

Description:

Power mosfet.
Power MOSFET IRFI520G, SiHFI520G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 .

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SiHFI520G Power MOSFET Vishay Siliconix

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SiHFI520G Features

SiHFI520G General Description

Datasheet Details

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Description:

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