Datasheet4U Logo Datasheet4U.com

SiHFI540G - Power MOSFET

📥 Download Datasheet

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

Power MOSFET IRFI540G, SiHFI540G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

More Datasheets from Vishay

Part Number Description
SiHFI510G Power MOSFET
SiHFI520G Power MOSFET
SiHFI614G Power MOSFET
SiHFI620G Power MOSFET
SiHFI624G Power MOSFET
SiHFI630G Power MOSFET
SiHFI634G Power MOSFET
SiHFI640G Power MOSFET
SiHFI644G Power MOSFET
SiHFI720G Power MOSFET