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SiHFI520G - Power MOSFET

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General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

Power MOSFET IRFI520G, SiHFI520G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single 0.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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