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SiHFI740G Datasheet, Vishay Siliconix

SiHFI740G mosfet equivalent, power mosfet.

SiHFI740G Avg. rating / M : 1.0 rating-11

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SiHFI740G Datasheet

Features and benefits


* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available
* Sink to lead creepage distance = 4.8 mm Available
* Dynami.

Application

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardwar.

Image gallery

SiHFI740G Page 1 SiHFI740G Page 2 SiHFI740G Page 3

TAGS

SiHFI740G
Power
MOSFET
SiHFI744G
SiHFI720G
SiHFI730G
Vishay Siliconix

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