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Vishay Intertechnology Electronic Components Datasheet

TN0200K Datasheet

N-Channel 20-V (D-S) MOSFETs

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TN0200K pdf
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N-Channel 20-V (D-S) MOSFETs
TN0200K
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.4 at VGS = 4.5 V
20
0.5 at VGS = 2.5 V
ID (A)
0.73
0.65
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 4000 V
APPLICATIONS
RoHS
COMPLIANT
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
TO-236
(SOT-23)
G1
S2
3D
Marking Code: K2ywl
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
Top View
Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free)
100 Ω
G
D
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Currenta
IDM
Continuous Source Current (Diode Conduction)b
IS
Power Dissipationb
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t 10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
Symbol
RthJA
Limit
20
±8
0.73
0.58
4
0.3
0.35
0.22
- 55 to 150
Unit
V
A
W
°C
Limit
357
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

TN0200K Datasheet

N-Channel 20-V (D-S) MOSFETs

No Preview Available !

TN0200K pdf
TN0200K
Vishay Siliconix
New Product
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
rDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall TIme
tf
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 50 µA
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 0.6 A
VGS = 2.5 V, ID = 0.6 A
VDS = 5 V, ID = 0.6 A
IS = 0.3 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V
ID = 0.6 A
VDD = 10 V, RL = 16 Ω
ID 0.6 A, VGEN = 4.5 V
Rg = 6 Ω
20
V
0.45 0.6
1.0
±5
0.1 µA
10
2.5
A
1.5
0.2 0.4
0.25 0.5
Ω
2.2 S
0.8 1.2 V
1400
190
300
105
17
20
55
30
2000
25
30
85
45
pC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0 4
VGS = 5 thru 2.5 V
TJ = - 55 °C
3.2
3
2 V 25 °C
2.4
2 125 °C
1.6
1.5 V
1
0.8
0.0
0.0
1V
0.4 0.8 1.2 1.6
VDS – Drain-to-Source Voltage (V)
Output Characteristics
2.0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 72678
S-71198–Rev. B, 18-Jun-07


Part Number TN0200K
Description N-Channel 20-V (D-S) MOSFETs
Maker Vishay Siliconix
Total Page 5 Pages
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