CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

JXND ELECTRONICS CO.,LTD SOT-23 Plastic Encapsulate MOSFETS AO3400 30V N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)Typ

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

QM3006M3 General Description The QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS

Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Description The XR46

CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest performance trench N-ch MOSFETs with extreme high ce

 Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology XR 20P07D P-Ch 18V

Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

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RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Cha

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and

-6A, -20V P 　P 　P-Channel Enhancement-Mode MOSFETs SMD 　　Features 　■-20V, -6A, RDS(ON)=33mΩ @ VGS=-4.5V 　■High dense cell design for extremely low