MOSFETs Datasheet | Specifications & PDF Download

Features VDS (V) = -40V RDS(ON) 70m (VGS = 10V) ，ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ，ID = -3.5A SI2319A SOT-23 Plastic-Encapsulate MOSFETS SOT–23 1

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S8MNC020 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technolog

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www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description The100N04 is N-ch MOSFETs with extreme high cell density , which pr

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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60V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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60V N-Channel MOSFETs PDD6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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40V N-Channel MOSFETs PDC4904X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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RFP45N02L, RF1S45N02L, RF1S45N02LSM May 1997 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs Description The RFP45N02L, RF1S45N02L, and RF1S

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600V N-Channel MOSFETs PDC02N60T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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