MOSFETs Datasheet | Pinout, Features, Price Comparison & PDF

JXND ELECTRONICS CO.,LTD SOT-23 Plastic Encapsulate MOSFETS AO3400 30V N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)Typ

CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

QM3006M3 General Description The QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS

40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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QM6015D P-Ch 60V Fast Switching MOSFETs General Description The QM6015D is the highest performance trench P-ch MOSFETs with extreme high cell density

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Cha

FQD60N03L April 2004 FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω General Description This device employs advanced MOSFET technology an

 Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology XR 20P07D P-Ch 18V

CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest performance trench N-ch MOSFETs with extreme high ce

TPC8055-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8055-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2.

 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Description The XR46

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 15

30V P-Channel MOSFETs PDN3911S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr