IXTP3N110, IXTA3N110 Datasheet - IXYS Corporation

IXTP3N110 - (IXTx3N1x0) High Voltage Power MOSFETs

www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°.

IXTP3N110 Features

* l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb.in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Moldi

IXTA3N110_IXYSCorporation.pdf