l l l
G
DS
TO-263 (IXTA)
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263
300
1
IXTP3N100D2, IXYS
Depletion Mode MOSFET
IXTA3N100D2 IXTP3N100D2
N-Channel
D
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25C t.
IXTP3N120, IXYS Corporation
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120
Symbol
VDSS VDGR VGSS VGSM I.