IXTP3N110, IXTA3N110 (IXTx3N1x0) High Voltage Power MOSFETs

IXYS Corporation

Description

www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o.

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IXTP3N110 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTP3N110, IXTA3N110. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTP3N110, IXTA3N110
Manufacturer: IXYS Corporation
File Size: 175.61 KB
Datasheet: IXTA3N110_IXYSCorporation.pdf
Description: (IXTx3N1x0) High Voltage Power MOSFETs
Note: This datasheet PDF includes multiple part numbers: IXTP3N110, IXTA3N110.
Please refer to the document for exact specifications by model.

Features

* l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb. in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Moldi

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IXTA3N110 IXTx3N1x0 High Voltage Power MOSFETs IXYS Corporation

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