IXTP01N100D - N-Channel MOSFET
Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 1000 V 1000 V 20 V 30 V 400 mA 25 W 1.1 W - 55 +150 C 150 C - 5.
IXTP01N100D Features
* Normally ON Mode
* International Standard Packages
* Low RDS(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell Structure
* Fast Switching Speed
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications