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IXTP02N50D, IXTY02N50D - High Voltage MOSFET

IXTP02N50D Description

High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.

IXTP02N50D Features

* Normally ON Mode
*  International Standard Packages
*  Low RDS(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell Structure
* Fast Switching Speed Advantages
* Easy to Mount
* Space Savings

IXTP02N50D Applications

* Level Shifting
* Triggers
* Solid State Relays
* Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98861C(5/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1 Ciss Coss Crss VGS = -10V, VDS =

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This datasheet PDF includes multiple part numbers: IXTP02N50D, IXTY02N50D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP02N50D, IXTY02N50D
Manufacturer
IXYS Corporation
File Size
208.00 KB
Datasheet
IXTY02N50D_IXYSCorporation.pdf
Description
High Voltage MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP02N50D, IXTY02N50D.
Please refer to the document for exact specifications by model.

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