IXTP02N50D Datasheet - IXYS Corporation

IXTP02N50D High Voltage MOSFET

High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 500 V 500.

IXTP02N50D Features

* Normally ON Mode

*  International Standard Packages

*  Low RDS(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell Structure

* Fast Switching Speed Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

IXTP02N50D Datasheet (208.00 KB)

IXTP02N50D Datasheet Preview — Preview of IXTP02N50D PDF

Datasheet Details

Part number:

IXTP02N50D

Manufacturer:

IXYS Corporation

File Size:

208.00 KB

Description:

High voltage mosfet.

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IXTP02N50D High Voltage MOSFET IXYS Corporation

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