IXTP02N50D - High Voltage MOSFET
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 = RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 500 V 500.
IXTP02N50D Features
* Normally ON Mode
* International Standard Packages
* Low RDS(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell Structure
* Fast Switching Speed
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications