IXTP01N100D Description
+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in.
IXTP01N100D Key Features
- Normally ON Mode - International Standard Packages - Low RDS(on) HDMOSTM Process
- Rugged Polysilicon Gate Cell Structure
- Fast Switching Speed
- Easy to Mount
- Space Savings
- High Power Density