• Part: IXTP02N120P
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 206.17 KB
Download IXTP02N120P Datasheet PDF
IXYS
IXTP02N120P
IXTP02N120P is manufactured by IXYS.
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 20 30 40 mJ V/ns -55 ... +150 C C -55 ... +150 C °C °C 1.13 / 10 Nm/lb.in 0.35 g 3.00...