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IXTP02N120P - Power MOSFET

Download the IXTP02N120P datasheet PDF. This datasheet also covers the IXTY02N120P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low Q G.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY02N120P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP02N50D High Voltage MOSFET IXYS Corporation
IXTP01N100D N-Channel MOSFET IXYS Corporation
IXTP05N100 Power MOSFET IXYS Corporation
IXTP05N100 N-Channel MOSFET INCHANGE
IXTP05N100M N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP05N100M N-Channel MOSFET
IXTP06N120P Power MOSFET
IXTP08N100D2 Power MOSFET
IXTP08N100P Power MOSFET
IXTP100N04T2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 1200 V 1200 V 20 V 30 V 0.2 A 0.6 A 0.2 A 40 mJ 10 V/ns 33 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 3.