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IXTP02N120P - Power MOSFET

This page provides the datasheet information for the IXTP02N120P, a member of the IXTY02N120P Power MOSFET family.

Datasheet Summary

Features

  • International Standard Packages.
  • Low Q G.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Datasheet preview – IXTP02N120P

Datasheet Details

Part number IXTP02N120P
Manufacturer IXYS
File Size 206.17 KB
Description Power MOSFET
Datasheet download datasheet IXTP02N120P Datasheet
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Full PDF Text Transcription

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 1200 V 1200 V 20 V 30 V 0.2 A 0.6 A 0.2 A 40 mJ 10 V/ns 33 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 3.
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