IXTP300N04T2 Datasheet - IXYS

IXTP300N04T2 Power MOSFET

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA300N04T2 IXTP300N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 300 120 900 100 600 480 -55 +175 175 -55 +175 A A A A mJ W  C  C  C Maximum Lead.

IXTP300N04T2 Features

* International Standard Packages

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier 175°C Operating Temperature

* High Current Handling Capability

* ROHS Compliant

* High Performance Trench Technology for extremely low RDS(on) Advantages

* High Pow

IXTP300N04T2 Datasheet (313.63 KB)

IXTP300N04T2 Datasheet Preview — Preview of IXTP300N04T2 PDF

Datasheet Details

Part number:

IXTP300N04T2

Manufacturer:

IXYS

File Size:

313.63 KB

Description:

Power mosfet.

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IXTP300N04T2 Power MOSFET IXYS

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