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IXTP340N04T4 Power MOSFET

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Description

TrenchT4TM Power MOSFET Preliminary Technical Information IXTP340N04T4 IXTH340N04T4 VDSS = ID25 = RDS(on)  40V 340A 1.9m N-Channel Enhancement .

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Datasheet Specifications

Part number
IXTP340N04T4
Manufacturer
IXYS
File Size
253.30 KB
Datasheet
IXTP340N04T4-IXYS.pdf
Description
Power MOSFET

Features

* International Standard Packages
* 175°C Operating Temperature
* High Current Handling Capability
* Avalanche Rated
* Fast Intrinsic Rectifier
* Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID

Applications

* DC-DC Converters & Off-Line UPS
* Primary-Side Switch
* High Current Switching Applications © 2016 IXYS CORPORATION, All Rights Reserved DS100699B(03/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS

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