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IXTP36N30P, IXTA36N30P Power MOSFET

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Description

PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 300 V 36 A 110 mΩ S.

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This datasheet PDF includes multiple part numbers: IXTP36N30P, IXTA36N30P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IXTP36N30P, IXTA36N30P
Manufacturer
IXYS Corporation
File Size
293.40 KB
Datasheet
IXTA36N30P_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP36N30P, IXTA36N30P.
Please refer to the document for exact specifications by model.

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99155E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg

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