IXTP32P05T - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
IXTP32P05T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var.
IXTP32P05T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTY32P05T IXTA32P05T IXTP32P05T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ .
IXTP32N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP32N20T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP32N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTA32N20T IXTP32N20T
VDSS = 200V
ID25 = 32A RDS(on) ≤ 78mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifi.
IXTP32N65X - Power MOSFET
(IXYS)
Preliminary Technical Information
X-Class Power MOSFET
N-Channel Enhancement Mode
IXTP32N65X IXTQ32N65X IXTH32N65X
VDSS = ID25 = RDS(on)
650V 32A.
IXTP32N65X - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 135mΩ@VGS= 10V ·Fas.