IXTP3N100D2, IXTA3N100D2 Datasheet - IXYS

IXTP3N100D2 - MOSFET

Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 +150 150 - 55 +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified.

IXTP3N100D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-Up Circuits

IXTA3N100D2-IXYS.pdf