IXTP3N120, IXTA3N110 Datasheet - IXYS Corporation

IXTP3N120 Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 3 12 3 700 5 200 -55 +150 150 -55 +150 .

IXTP3N120 Features

* International Standard Packages

* High Voltage Package

* Fast Intrinsic Diode

* Avalanche Rated

* Molding Epoxies meet UL 94 V-0 Flammability Classification

* High Blocking Voltage Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

IXTA3N110_IXYSCorporation.pdf

IXTP3N120 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTP3N120, IXTA3N110. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXTP3N120, IXTA3N110

Manufacturer:

IXYS Corporation

File Size:

175.61 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTP3N120, IXTA3N110.
Please refer to the document for exact specifications by model.

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TAGS

IXTP3N120 IXTA3N110 Power MOSFET IXYS Corporation

IXTP3N120 Distributor