High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C 3 12 3 700 5 200 -55 +150 150 -55 +150
Datasheet Details
Part number:
IXTP3N120, IXTA3N110
Manufacturer:
IXYS Corporation
File Size:
175.61 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTP3N120, IXTA3N110.
Please refer to the document for exact specifications by model.