PDS6701 Datasheet (Potens semiconductor)

PDS6701, N+P Channel MOSFETs

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod

PDS6701 Features

* Fast switching

* Green Device Available

* Suit for 4.5V Gate Drive Applications Applications

* DC Fan

* Motor Drive Applications

* Networking

* Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ