PDS6810 Datasheet - Potens semiconductor

PDS6810 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS6810 Features

* 60V, 4.5A, RDS(ON) =54mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS

PDS6810 Datasheet (466.16 KB)

PDS6810 Datasheet Preview — Preview of PDS6810 PDF

Datasheet Details

Part number:

PDS6810

Manufacturer:

Potens semiconductor

File Size:

466.16 KB

Description:

N-channel mosfets.

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PDS6810 N-Channel MOSFETs Potens semiconductor

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