IXFH9N80Q - Power MOSFETs

IXYS

Datasheet Details

l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 50 µA 1 mA 1.1 Ω Advantages l Easy to mount l Space savings l High power density © 1999 IXYS All rights reserved 98629 (.

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Published: Sep 10, 2016 |