* l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ =
IXFH9N80Q Datasheet (Direct Link)
IXFH9N80Q
IXYS
Direct Link
Power mosfets.
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
VDSS I
D25
RDS(on)
= 800 V = 9.
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