IXFH100N30X3, IXFT100N30X3HV Datasheet - IXYS

IXFH100N30X3 - N-Channel Power MOSFET

X3-Class HiPerFETTM Power MOSFET IXFT100N30X3HV IXFH100N30X3 N-Channel Enhancement Mode Avalanche Rated D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-26

IXFH100N30X3 Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFT100N30X3HV-IXYS.pdf