* z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005
IXFH110N10P Datasheet (184.04 KB)
IXFH110N10P
IXYS
184.04 KB
Polarht hiperfet power mosfet.
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Preliminary Data Sheet
Symbol VDSS VDGR VGSS VGSM ID25.
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