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IXFH110N10P, IXFV110N10PS PolarHT HiPerFET Power MOSFET

IXFH110N10P Description

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.

IXFH110N10P Features

* z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFH110N10P, IXFV110N10PS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFH110N10P, IXFV110N10PS
Manufacturer
IXYS
File Size
184.04 KB
Datasheet
IXFV110N10PS_IXYS.pdf
Description
PolarHT HiPerFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFH110N10P, IXFV110N10PS.
Please refer to the document for exact specifications by model.

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PolarHT HiPerFET Power MOSFET IXYS
IXYS IXFH110N10P-like datasheet