* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Symbol VDSS VGS(th
IXFH11N80 Datasheet (665.40 KB)
IXFH11N80
IXYS Corporation
665.40 KB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80
IXFH/IXFM 11 N80 IXFH/IXFM 13 N.
📁 Related Datasheet
IXFH11N100 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH11N60 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH11N90 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH110N10P PolarHT HiPerFET Power MOSFET (IXYS)
IXFH110N15T2 N-Channel MOSFET (INCHANGE)
IXFH110N15T2 TrenchT2 HiperFET Power MOSFET (IXYS Corporation)
IXFH110N25T TrenchHV Power MOSFET HiPerFET (IXYS Corporation)
IXFH100N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFH100N30X3 N-Channel Power MOSFET (IXYS)
IXFH102N15T Power MOSFET (IXYS Corporation)
