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IXFH10N90

Power MOSFET

IXFH10N90 Features

* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwis

IXFH10N90 Datasheet (86.00 KB)

Preview of IXFH10N90 PDF

Datasheet Details

Part number:

IXFH10N90

Manufacturer:

ETC

File Size:

86.00 KB

Description:

Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V.

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IXFH10N90 Power MOSFET ETC

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