IXFH10N90 Datasheet - ETC

IXFH10N90 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 Maximum Ratings 900 900 ±20 ±30 10 12 13.

IXFH10N90 Features

* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwis

IXFH10N90 Datasheet (86.00 KB)