PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse
IXFP10N80P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH10N80P, IXFP10N80P
Manufacturer:
IXYS Corporation
File Size:
168.74 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFH10N80P, IXFP10N80P.
Please refer to the document for exact specifications by model.