* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteri
IXFH10N100 Datasheet (1.11 MB)
IXFH10N100
IXYS Corporation
1.11 MB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions .
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