IXFH10N100 Datasheet - IXYS Corporation

IXFH10N100 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω trr ≤ 250 ns Maximum Ratings TO-247 AD (IXFH) VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 1000 V 1000 V ±20 V ±30 V (TAB) TC = 25°C TC = 25°C, p.

IXFH10N100 Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteri

IXFH10N100_IXYSCorporation.pdf