IXFH12N80P Datasheet - IXYS

IXFH12N80P, Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr.

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IXFH12N80P-IXYS.pdf

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Datasheet Details

Part number:

IXFH12N80P

Manufacturer:

IXYS

File Size:

166.68 KB

Description:

Power MOSFET

Features

* D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) ra

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IXFH12N80P Power MOSFET IXYS

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