IXFH12N50F Datasheet - IXYS Corporation

IXFH12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 12N50F VDSS IXFT 12N50F ID25 RDS(on) = 500 V = 12 A = 0.4 W trr £ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 TO-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Conti.

IXFH12N50F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l

IXFH12N50F_IXYSCorporation.pdf