* l RF capable MOSFETs l Double metal process for low gate resistance l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l
IXFH12N50F Datasheet (303.27 KB)
IXFH12N50F
IXYS Corporation
303.27 KB
Hiperrf power mosfets f-class: megahertz switching.
Advanced Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic.
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