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IXFH102N15T - N-Channel MOSFET

IXFH102N15T Description

isc N-Channel MOSFET Transistor *.

IXFH102N15T Features

* Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFH102N15T Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 102 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55

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Datasheet Details

Part number
IXFH102N15T
Manufacturer
INCHANGE
File Size
334.19 KB
Datasheet
IXFH102N15T-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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