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IXFH12N65X2 - N-Channel MOSFET

IXFH12N65X2 Description

isc N-Channel MOSFET Transistor *.

IXFH12N65X2 Features

* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 310mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFH12N65X2 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Contin

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Datasheet Details

Part number
IXFH12N65X2
Manufacturer
INCHANGE
File Size
330.14 KB
Datasheet
IXFH12N65X2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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