* z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V nA µA µA mΩ z International
IXFH120N15P Datasheet (612.50 KB)
IXFH120N15P
IXYS Corporation
612.50 KB
Polar mosfets.
Advanced Technical Information
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 120N15P IXFT 120N15P
VDS.
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