IXFH120N15P Datasheet - IXYS Corporation

IXFH120N15P, Polar MOSFETs

Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDS.

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IXFH120N15P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH120N15P

Manufacturer:

IXYS Corporation

File Size:

612.50 KB

Description:

Polar MOSFETs

Features

* z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V nA µA µA mΩ z International

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IXFH120N15P Polar MOSFETs IXYS Corporation

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