IXFH12N100P Datasheet, Mosfets, IXYS Corporation

IXFH12N100P Features

• Mosfets z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS

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Part number:

IXFH12N100P

Manufacturer:

IXYS Corporation

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192.24kb

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📄 Datasheet

Description:

Polar hiperfet power mosfets.

IXFH12N100P Application

• Applications z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z z VGS = 10V, ID = 0.5
• ID25, Note 1 Swit

TAGS

IXFH12N100P

IXYS Corporation

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