Datasheet Details
Part number:
IXFH12N100P
Manufacturer:
IXYS Corporation
File Size:
192.24 KB
Description:
Polar HiPerFET Power MOSFETs
IXFH12N100P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH12N100P
Manufacturer:
IXYS Corporation
File Size:
192.24 KB
Description:
Polar HiPerFET Power MOSFETs
Features
* z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C CharacteApplications
* z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z z VGS = 10V, ID = 0.5IXFH12N100P Distributors
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