IXFH12N100P Polar HiPerFET Power MOSFETs

IXYS Corporation

Description

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 .

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Datasheet Specifications

Part number: IXFH12N100P
Manufacturer: IXYS Corporation
File Size: 192.24 KB
Datasheet: IXFH12N100P_IXYSCorporation.pdf
Description: Polar HiPerFET Power MOSFETs

Features

* z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characte

Applications

* z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z z VGS = 10V, ID = 0.5
* ID25, Note 1 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99920B(03/11) www. DataSheet4U. net © 20

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IXFH12N100P Polar HiPerFET Power MOSFETs IXYS Corporation

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