* z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characte
IXFH12N100P Datasheet (192.24 KB)
IXFH12N100P
IXYS Corporation
192.24 KB
Polar hiperfet power mosfets.
PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH12N100P IXFV12N100P IXFV12N100PS
VDSS ID25
.
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