IXFH100N25P Datasheet - IXYS

IXFH100N25P PolarHT HiPerFET Power MOSFET

PolarHT HiPerFET Power MOSFET For Plasma Display Applications TM IXFH 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 .

IXFH100N25P Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwi

IXFH100N25P_IXYS.pdf