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IXFH100N25P PolarHT HiPerFET Power MOSFET

IXFH100N25P Description

PolarHT HiPerFET Power MOSFET For Plasma Display Applications TM IXFH 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr www.DataSheet.

IXFH100N25P Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 Nm/lb. in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwi

IXFH100N25P Applications

* TM IXFH 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr www. DataSheet4U. com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead cur

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Datasheet Details

Part number
IXFH100N25P
Manufacturer
IXYS
File Size
109.47 KB
Datasheet
IXFH100N25P_IXYS.pdf
Description
PolarHT HiPerFET Power MOSFET

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PolarHT HiPerFET Power MOSFET IXYS
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