* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwi
IXFH100N25P Datasheet (109.47 KB)
IXFH100N25P
IXYS
109.47 KB
Polarht hiperfet power mosfet.
PolarHT HiPerFET Power MOSFET
For Plasma Display Applications
TM
IXFH 100N25P
VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr
www.DataSheet.
📁 Related Datasheet
IXFH100N30X3 - N-Channel Power MOSFET
(IXYS)
X3-Class HiPerFETTM Power MOSFET
IXFT100N30X3HV IXFH100N30X3
N-Channel Enhancement Mode Avalanche Rated
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
.
IXFH102N15T - Power MOSFET
(IXYS Corporation)
Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = .
IXFH102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXFH10N100 - Power MOSFET
(IXYS Corporation)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
.
IXFH10N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
(IXYS Corporation)
w
w
w
.d
e e h s a t a
. u t4
m o c
..
.
IXFH10N65 - Power MOSFET
(IXYS Corporation)
w
w
w
.d
e e h s a t a
. u t4
m o c
..
.
IXFH10N80P - Power MOSFET
(IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXF.
IXFH10N90 - Power MOSFET
(ETC)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V.
