Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDS
IXFP102N15T_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH102N15T, IXFP102N15T
Manufacturer:
IXYS Corporation
File Size:
226.94 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFH102N15T, IXFP102N15T.
Please refer to the document for exact specifications by model.